NEW
Font size
WorksheetsPOWER DIODE
Total questions: 10
Worksheet time: 5mins
An
ideal power diode must have
low forward current carrying capacity
large
reverse breakdown voltage
high ohmic junction resistance
high
reverse recovery time
To
make a signal diode suitable for high current & high voltage carrying
applications with minimum losses, ________
a
lightly doped n layer is grown between the two p & n layers
a
heavily doped n layer is grown between the two p & n layers
a lightly doped p layer is grown between the
two p & n layers
a
heavily doped p layer is grown between the two p & n layers
The V-I
Characteristics of the diode lie in the
1st
& 2nd quadrant
1st
& 3rd quadrant
1st
& 4th quadrant
Only in
the 1st quadrant
Which
of the following is true in case of a power diode with R load?
I grows
almost linearly with V
I decays almost linearly with V
I is
independent of V
I
initial grows than decays
Which
following is a two terminal three layer device?
MOSFET
BJT
POWER
DIODE
SCR
which statement is correct? (the dark circles represent the electrons)
p-type of the diode is connected to the negative terminal.
Electron moves across the p-n junction, makes the diode forward biased
current will not flow in the circuit
reverse biased circuit
what is the meaning of rectification?
a process of smoothing using a capacitor
a process of adding impurities to pure materials
a process of converting an alternating current into a direct current by using a diode.
Component that Convert AC to DC and allow current to flow in one Direction
Capacitor
Diode
Inverter
Resistor
What is the name of this Diode?
PN junction
LED
silicon
PNP
Diode has polarity
anode and cathode
on and off
output and input
none of the above
