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BE/Mod2/Semiconductors/16.08.2021

Total questions: 91

Worksheet time: 46mins

Name
Class
Date
1.

The material with the biggest forbidden gap is

a)

Conductor

b)

Insulator

c)

Semiconductor

d)

Superconductor

2.

For the energy-band diagrams shown, which ones represent semiconductors?

a)

a

b)

c

c)

b

d)

b and c

3.

The forbidden energy gap for Germanium is of the order of

a)

0.7 eV

b)

0.3 eV

c)

1.1 eV

d)

10 eV

4.

The forbidden energy gap for silicon is of the order of

a)

0.7 eV

b)

0.3 eV

c)

1.1 eV

d)

10 eV

5.

A pentavalent impurity added to intrinsic semiconductor while forming an extrinsic semiconductor is

a)

Boron

b)

Arsenic

c)

Indium

d)

Gallium

6.

The reverse saturation current in a PN Junction diode is only due to

a)

majority carriers

b)

minority carriers

c)

donor ions

d)

acceptor ions

7.

The process of adding of a certain amount of specific impurities atoms in the pure semiconductor is

a)

Doping

b)

Donor

c)

Acceptor

d)

Ionization

8.

which statement is correct? (the dark circles represent the electrons)

a)

current will not flow in the circuit

b)

p-type of the diode is connected to the negative terminal.

c)

reverse biased circuit

d)

Electron moves across the p-n junction, makes the diode forward biased

9.

Which of the following is not an application of diode in electronic circuits?

a)

Voltage regulator

b)

Switch

c)

Amplifier

d)

Rectifier

10.

The minority carriers in P-type silicon are

a)

Electron

b)

Hole

c)

Donor ion

d)

Acceptor ion

11.

The majority carriers in P-type silicon are

a)

Electron

b)

Hole

c)

Donor ion

d)

Acceptor ion

12.

The majority carriers in N-type silicon are

a)

Electron

b)

Hole

c)

Donor ion

d)

Acceptor ion

13.

The minority carriers in N-type silicon are

a)

Electron

b)

Hole

c)

Donor ion

d)

Acceptor ion

14.

During formation of p-n junction,

a)

a hole diffuses from n to p side

b)

an electron diffuses from p to n side

c)

No diffusion of electrons and holes

d)

an electron diffuses from n to p side

15.

In an intrinsic semiconductor, electron and hole concentrations are equal at which temperature?

a)

0K

b)

Low Temperature

c)

High Temperature

d)

All Temperature

16.

A hole refers to ______.

a)

a positively charged electron

b)

an electron which has somehow lost its

charge

c)

the absence of an electron

d)

a proton

17.

Which of the following is/are true for an intrinsic

semiconductor?

I. Pure semiconductor

II. Have high conductivity

III. Conducts due to thermally freed electrons

a)

I only

b)

I and II

c)

I and III

d)

I, II and III

18.

Dopant atoms that increase conductivity are

added to a semiconductor to produce ____.

a)

a pure semiconductor

b)

a conductor

c)

an intrinsic semiconductor

d)

an extrinsic semiconductor

19.

When dopants are added to a semiconductor, the

net charge of the material ____.

a)

remains zero

b)

becomes positive

c)

becomes negative

d)

becomes positive or negative depending

on the dopant added

20.

The figure shows an

a)

n-type semiconductor

b)

p-type semiconductor

c)

intrinsic semiconductor

d)

pure semiconductor

21.

The correct description about this figure

a)

positive terminal of battery is connected to the p -type material and the negative terminal of battery is connected to the n -type material

b)

the net flow of charge in one direction is zero

c)

Diode is “ON” condition

d)

Reverse-Bias Condition

22.

Which of the following statement is true about semiconductor?

a)

The semiconductors are rarely used in electronic circuits.

b)

The conductivity of a semiconductor is somewhere between that of an insulator, and a conductor.

c)

The semiconductor cannot transfer heat to human skin.

d)

Iron and Carbon are the examples for semiconductor

23.

Energy bands in solids are a consequence of _____

a)

Avogadro's Hypothesis

b)

Einstein's Photoelectric effect

c)

Pauli's Exclusion Principle

d)

Heisenberg's Uncertainty Principle

24.

Doping in semiconductors results in

1. Formation of Extrinsic semiconductor

2. Increase in conduction

3. Increase in resistivity

4. Increase in bandgap

a)

1 and 2

b)

1 and 3

c)

1 and 4

d)

2 and 3

25.

In semiconductors the conductivity takes place due to:

a)

Free and conduction electrons

b)

Valence and conduction electrons

c)

Valence and conduction holes

d)

Free electrons and holes

26.

A semiconductor has ____ temperature co-efficient of resistance

a)

Positive

b)

Negative

c)

Zero

d)

Temperature co-efficient can be positive or negative based on the material

27.

P-type and N-type extrinsic semiconductors are formed by adding impurities of valency

a)

5 and 3 respectively

b)

5 and 4 respectively

c)

3 and 4 respectively

d)

3 and 5 respectively

28.

The bond that exists in a semiconductor is:

a)

Ionic bond

b)

covalent bond

c)

metallic bond

d)

hydrogen bond

29.

A semiconductor has generally ……………… valence electrons.

a)

2

b)

3

c)

4

d)

6

30.

Addition of trivalent impurity to a semiconductor creates many ……..

a)

Electrons

b)

Holes

c)

Both Holes and Electrons

d)

Valence electrons

31.

With forward bias to a pn junction , the width of depletion layer ………

a)

Decreases

b)

Increases

c)

Remains the same

d)

None of the above

32.

With reverse bias to a pn junction , the width of depletion layer ………

a)

Decreases

b)

Increases

c)

Remains the same

d)

None of the above

33.

At room temperature, an intrinsic semiconductor has ……….

a)

No holes or free electrons

b)

Free electrons only

c)

Free holes only

d)

A few free electrons and holes

34.

The term bias in electronics usually means ……….

a)

the value of ac voltage in the signal.

b)

the value of dc voltages for the device to operate properly.

c)

the condition of current through a pn junction.

d)

the value of ac current in the signal.

35.

The schematic symbol represents

a)

Zener diode

b)

Varactor diode

c)

Rectifier Diode

d)

Light Emitting Diode

36.

The current due to result of difference of carrier concentration from one region to another region is called

a)

Diffusion Current

b)

Drift Current

c)

Reverse Saturation Current

d)

Minority Charge Carrier current

37.

The voltage at which the PN junctions breaks down and forward current suddenly start flowing is called

a)

Reverse breakdown voltage

b)

Cut- in Voltage

c)

Peak inverse Voltage

d)

None of the above

38.

The maximum reverse voltage that can be applied to PN junction without damge to the junction is called.................

a)

Reverse breakdown voltage

b)

Cut- in Voltage

c)

Peak inverse Voltage

d)

None of the above

39.

The Knee voltage in the case of Germanium is

a)

0.7V

b)

1.1V

c)

1.3V

d)

0.3V

40.

The Knee voltage in the case of Silicon is

a)

0.7V

b)

1.1V

c)

1.3V

d)

0.3V

41.

When an atom donates one of its valence electron to semiconductor, then it becomes

a)

Negative immobile ion

b)

Positive immobile ion

c)

Acceptor ion

d)

None of the above

42.

When an atom accepts an electron, then it becomes

a)

Negative immobile ion

b)

Positive immobile ion

c)

Donor ion

d)

None of the above

43.

Region containing uncompensated ions is depleted of charge carriers and thus known as.....

a)

Depletion region

b)

Barrier region

c)

Space-charge region

d)

All the options

44.

The depletion region contains

a)

Holes

b)

Electrons

c)

Immobilized charge carriers

d)

Donor ions only

45.

Which one is not the property of semiconductor?

a)

4 electrons in outermost orbit, in covalent bonding.

b)

Semiconductor has 2 types of charge carriers.

c)

Valence Band and Conduction Band overlap each other.

d)

Doping can be done in semiconductor

46.

Component that allow current to flow in one direction is

a)

Resistor

b)

Capacitor

c)

Inductor

d)

Diode

47.

Diagram shows a circuit with a bulb that does not light up. Which of the following actions will make the bulb light up?

a)

Connecting a fuse to the circuit

b)

Reversing the battery connection

c)

Changing the power supply to a 3V battery

d)

Reversing the bulb connection

48.

Which of the following circuits will light up the bulb?

a)

A

b)

B

c)

C

d)

D

49.

Diagram shows four diodes connected to a direct current power supply, d.c

Which diodes are connected in forward bias?

a)

W and Y

b)

W and Z

c)

X and Y

d)

X and Z

50.

The region on either side of the junction which becomes free from the mobile charge carriers is called

a)

Energy gap region

b)

Charge free region

c)

Diffusion region

d)

Depletion region

51.

Which of the following is a semiconductor?

a)

Silicon

b)

Copper

c)

Bronze

d)

Brass

52.

The purpose of doping in semiconductor is

a)

To increase the resistance of semiconductor

b)

To increase the thermal energy of semiconductor

c)

To increase the temperature of the semiconductor

d)

To increase the conductivity of the semiconductor

53.

zener diodes usually operated in

a)

Forward bias

b)

Reverse bias

c)

Above knee voltage

d)

None of the options

54.

When a PN junction is in forward bias, by increasing the battery voltage

a)

Circuit resistance increases

b)

Current through P-N junction decreases

c)

Current through P-N junction increases

d)

None of the options

55.

When a PN junction is reverse-biased

a)

Holes and electrons tend to concentrate towards the junction

b)

The barrier tends to break down

c)

Holes and electrons tend to move away from the junction

d)

None of the options

56.

The diffusion current in diode is due to --------------

a)

Majority carriers

b)

Minority carriers

c)

Positive Donor ions

d)

Negative Acceptor ions

57.

The drift current in diode is due to --------------

a)

Majority carriers

b)

Minority carriers

c)

Positive Donor ions

d)

Negative Acceptor ions

58.

What is the output voltage for the circuit shown, if D1 and D2 are Silicon diodes, and D3 is a Germanium diode?

a)

1.3V

b)

7.3V

c)

7.7V

d)

8.4V

59.

Which one of the following describes the condition of a rectifier diode when it is reverse biased?

a)

Offers zero resistance

b)

Behaves as a short circuit

c)

Offers high resistance

d)

Conducts current

60.

Find the voltage across the Silicon diode in the circuit shown:

a)

0V

b)

0.2V

c)

0.7V

d)

5.3V

61.

which component produces an IV graph like this?

a)

Tunnel diode

b)

Varactor diode

c)

Silicon Diode

d)

Resistor

62.

Select the correct location of forward bias and reverse bias on I-V Characteristic Curve figure

a)

Forward bias- Quadrant I, Reverse bias-Quadrant III

b)

Forward bias- Quadrant III, Reverse bias-Quadrant I

c)

Forward bias- Quadrant I, Reverse bias-Quadrant I

d)

Forward bias- Quadrant III, Reverse bias-Quadrant III

63.

The fig: A and Fig: B represents

a)

A--.Forward biased;B--Reverse biased

b)

B--.Forward biased;A--Reverse biased

c)

A--.Forward biased;B--Forward biased

d)

A--.Reverse biased;B--Reverse biased

64.

Magnitude of current developed during diffusion and drift respectively are

a)

Micro and mA

b)

nA and mA

c)

mA and Micro ampere

d)

Micro and nA

65.

Zener diodes are mostly used for

a)

Voltage regulator circuits

b)

Filter circuits

c)

Rectifier circuits

d)

Switching circuits

66.

In the circuit, what is the output voltage?

a)

120V

b)

70V

c)

50V

d)

20V

67.

Symbol for Zener diode

a)
b)
c)
d)
68.

The depletion region of the Zener diode is ____________

a)

Thick

b)

Very thin

c)

Very thick

d)

Normal

69.

In the breakdown region, a zener diode behaves like a …………… source.

a)

Constant Voltage

b)

Constant Current

c)

Constant Resistance

d)

Constant Power

70.

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in the figure. The current through the diode is

a)

10mA

b)

15mA

c)

20mA

d)

5mA

71.

Varactor diodes are used in FM receivers to obtain:

a)

Automatic frequency control

b)

Automatic volume control

c)

Automatic gain control

d)

None of the option

72.

Zener diodes are:

a)

Lightly doped p–n junctions

b)

Heavily doped p–n junctions

c)

Normally doped p–n junctions

d)

None of the option

73.

A general purpose diode is more likely to suffer an avalanche breakdown rather than a Zener breakdown because:

a)

Lightly doped

b)

Heavily doped

c)

It has weak covalent bonds

d)

It has strong covalent bonds

74.

Zener diode is always operated in which of the following bias condition

a)

Forward bias

b)

Reverse bias

c)

Unbiased

d)

Open circuited

75.

E-field in depletion region of Zener diode will be....

a)

Medium

b)

High

c)

Low

d)

infinity

76.

Avalanche breakdown mainely occurs due to a factor called....

a)

applied E-field

b)

collisions of charge carriers

c)

thermal energy

d)

equilibrium conditions

77.

Zener breakdown mainly occurs due to a factor called...

a)

applied E-field

b)

collisions of charge carriers

c)

thermal energy

d)

equilibrium conditions

78.

Zener breakdown occurs at which of the following voltage ranges

a)

less than 5V

b)

Between 5V and 8V

c)

Greater than 8V

d)

None of the option

79.

Avalanche breakdown occurs at which of the following voltage ranges

a)

less than 5V

b)

Between 5V and 8V

c)

Greater than 8V

d)

None of the option

80.

If the load current increases, IR will ______ and Iz will ______.

a)

remain the same, increase

b)

decrease, remain the same

c)

increase, remain the same

d)

remain the same, decrease

81.

IF VIN increases, what will happen to VR?

a)

Increase

b)

Decrease

c)

Remain the same

d)

None of the option

82.

If we attempt to increase the input voltage, what happens to the Zener current?

a)

Increase

b)

Decrease

c)

Remain the same

d)

None of the option

83.

The varactor diode works as _____________

a)

Variable Capacitance

b)

Variable Inductance

c)

Variable Resistance

d)

Fixed Capacitance

84.

The varactor diode works under _____

a)

Forward bias condition

b)

Unbiased condition

c)

Reverse bias condition

d)

Open circuit

85.

__________ is known as tunning diode.

a)

Zener diode

b)

Rectifier diode

c)

Tunnel diode

d)

Varactor diode

86.

which diode is known as esaki diode?

a)

Zener diode

b)

Rectifier diode

c)

Tunnel diode

d)

Varactor diode

87.

Maximum capacitance offered by varactor diode is at

a)

Forward biased condition

b)

Reverse biased condition

c)

Unbiased condition

d)

None of the option

88.

When the applied reverse voltage is increased in varactor diode, the width of the dielectric region ..........., which .............. the junction capacitance.

a)

increases,increases

b)

increases,decreases

c)

decreases,increases

d)

decreases,decreases

89.

What happens to a tunnel diode when the reverse bias effect goes beyond the valley point?

a)

it behaves as a normal diode

b)

it attains increased negative slope effects

c)

reverse saturation current increases

d)

None of the option

90.

The diode that exhibits negative resistance characteristics is

a)

Rectifier diode

b)

Tunnel diode

c)

Zener diode

d)

Varactor diode

91.

The quantum mechanics phenomenon describing the movement of particles across a barrier is called _____.

a)

Doping

b)

Purifying

c)

Biasing

d)

Tunneling

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