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semiconductor

Total questions: 25

Worksheet time: 13mins

Name
Class
Date
1.

A semiconductor is formed by ……… bonds.

a)

Covalent

b)

Electrovalent

c)

Co-ordinate

2.

A semiconductor has ………… temperature coefficient of resistance.

a)

Positive

b)

Zero

c)

Negative

3.

The most commonly used semiconductor is ………..

a)

Germanium

b)

Silicon

c)

Carbon

4.

A semiconductor has generally ……………… valence electrons.

a)

3

b)

6

c)

4

5.

When a pure semiconductor is heated, its resistance …………..

a)

Goes up

b)

Goes down

c)

Remains the same

6.

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

a)

An insulato

b)

p-type semiconductor

c)

n-type semiconductor

7.

Addition of pentavalent impurity to a semiconductor creates many ……..

a)

Free electrons

b)

Holes

c)

Valence electrons

8.

A pentavalent impurity has ………. Valence electrons

a)

3

b)

5

c)

4

9.

A trivalent impurity has ….. valence electrons

a)

4

b)

5

c)

3

10.

Addition of trivalent impurity to a semiconductor creates many ……..

a)

Holes

b)

Free electrons

c)

Valence electrons

11.

A hole and electron in close proximity would tend to ……….

a)

Repel each other

b)

Attract each other

c)

Have no effect on each other

12.

In a semiconductor, current conduction is due to ……..

a)

Only holes

b)

Only free electrons

c)

Holes and free electrons

13.

The random motion of holes and free electrons due to thermal agitation is called ……….

a)

Diffusion

b)

Pressure

c)

Ionisation

14.

A forward biased pn junction diode has a resistance of the order of

a)

Ω

b)

c)

15.

The battery connections required to forward bias a pn junction are ……

a)

+ve terminal to p and –ve terminal to n

b)

-ve terminal to p and +ve terminal to n

c)

-ve terminal to p and –ve terminal to n

16.

The barrier voltage at a pn junction for germanium is about ………

a)

5 V

b)

3 V

c)

Zero

17.

A reverse bias pn junction has …………

a)

Very narrow depletion layer

b)

Almost no current

c)

Very low resistance

18.

A pn junction acts as a ……….

a)

Controlled switch

b)

Bidirectional switch

c)

Unidirectional switch

19.

The leakage current across a pn junction is due to …………..

a)

Minority carriers

b)

Majority carriers

c)

Junction capacitance

20.

With forward bias to a pn junction , the width of depletion layer ………

a)

Decreases

b)

Increases

c)

Remains the same

21.

At room temperature, an intrinsic silicon crystal acts approximately as ……

a)

A battery

b)

A conductor

c)

An insulator

22.

Under normal conditions a diode conducts current when it is ……………

a)

reverse biased

b)

forward biased

c)

avalanched

23.

A semiconductor in its purest form is called.......

a)

A.Insulator

b)

B.Superconductor

c)

C.Intrinsic semiconductor

24.

An intrinsic semiconductor at absolute zero.........

a)

A.Becomes extrinsic semiconductor

b)

B.Behaves like an insulator

c)

C.Disintegrates into pieces

25.

A semiconductor has.... temperature co-efficient of resistance.

a)

A.Zero

b)

B.Positive

c)

C.Negative