Free Printable Self-Assessment Quiz-3

1.

In an ideal MOS capacitor (oxide charge = 0), the flatband voltage is equal to

a)

$q\Phi_m-q\Phi_s$

b)

0

c)

$-q\Phi_m$

d)

$q\Phi_s-q\Phi_m$

2.

The change in gate voltage on a MOS capacitor with reference to body contact is shared by potential drops in

a)

source and drain

b)

gate oxide and substrate

c)

substrate only

d)

gate region only

3.

In an ideal MOS capacitor in depletion condition in the surface, the bands which bend along position are

a)

$E_C,\ E_V,\ E_{FS}$

b)

$E_{FM},\ E_{FS},\ E_i$

c)

$E_C,\ E_V$

d)

$E_C,\ E_i,\ E_V$

4.

The electric fields at the interface of oxide and semiconductor in a MOS capacitor are discontinuous due to

a)

different potential drops

b)

different bandgaps

c)

different dielectric constants

d)

different electron affinities

5.

In the onset of weak inversion, what is the surface charge condition in the semiconductor?

a)

p-type

b)

degenrate

c)

n-type

d)

intrinsic

6.

At threshold voltage condition in an ideal MOS capacitor, the depletion width in the semiconductor is considered to be

a)

0

b)

infinite

c)

minimum

d)

maximum

7.

When there are positive oxide charges considered equivalently at the interface of oxide and semiconductor in a MOS capacitor on p-type substrate, the flatband voltage

a)

becomes negligible

b)

increases

c)

decreases

d)

becomes zero

8.

In a semiconductor device, wherever there is a band-bending, it can be supposed that there is

a)

a potential drop.

b)

a dielectric constant drop.

c)

an applied bias.

d)

an applied light source.

9.

The maximum electric field in a semiconductor in an ideal MOS capacitor based on p-type substrate is equal to

a)

$2\sqrt[]{\frac{\epsilon\Phi_{FS}}{qN_A}}$

b)

$\sqrt[]{\frac{2\epsilon V_{GB}}{qN_A}}$

c)

0

d)

0.5

10.

In flatband condition in a MOS capacitor, the charge at the surface of the semiconductor is

a)

0

b)

negative

c)

positive

d)

none of the above

11.

The Fermi level in the semiconductor in an ideal MOS capacitor remains constant because

a)

there is no flow of current

b)

there is flow of current

c)

there are immobile ions

d)

there are mobile electrons

12.

In strong inversion in an ideal MOS capacitor, the width of the inversion charge is smaller than that of the depletion region, but its magnitude is larger than that of the depletion region.

a)

The above statement is false.

b)

The above statement is true.

c)

The above statement is incomplete.

d)

The above statement is theoretically correct but practically impossible.

13.

The electric field in the semiconductor of an ideal MOS capacitor is

a)

quadratic

b)

linear

c)

polynomial

d)

cubic

14.

In flatband condition in an ideal MOS capacitor, the surface potential is zero, and oxide drop is zero.

a)

The above statement is false.

b)

The above statement is true.

c)

The above statement is impossible.

d)

The above statement does not hold true for a p-type substrate.

Self-Assessment Quiz-3

Total questions: 14

Worksheet time: 20mins

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