Digital IC Design Quiz-1

Fabrication is the process of constructing an -------------------

• netlist

• circuit

• electronic device or  product

• RLC

The starting material of silicon preparation is---------------

• sand

• SiO2

• Boron

• Polysilicon

In CZ technique the furnace is heated above ------------

• 1200◦C

• 800◦C

• 1232◦C

• 1500 ◦C

A --------------- is dipped in the molten Si and slowly withdrawn by the crystal pulling mechanism

• boron

• small seed crystal

• Polysilicon

• si ingot

The seed crystal is also rotated while it is being pulled, to ensure ---------------- across the surface

• uniformity

• square

• non-uniformity

• oxide layer

The furnace is rotated in the direction ---------------- to the crystal puller

• left

• right

• same

• opposite

The final solidified Si obtained is the ---------------------

• Photoresist

• Polysilicon

• Si ingot

• P ingot

žGrowth rate of silicon is --------------------

• 30 mm to 180mm/hour

• 3 mm to 18mm/hour

• 300 mm to 180mm/hour

• 600 mm to 380mm/hour

Slicing into wafers is carried out using internal cutting-edge -----------------------.

• gold blades

• diamond blades

• silver blades

• silicon blades

When the  oxidizing atmosphere  contains water vapour then it is ------------------

• diffusion

• wet oxidation

• dry oxidation

• epitaxial layer