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REVISION TEST

Total questions: 58

Worksheet time: 29mins

Name
Class
Date
1.

Find the odd one

a)

Schottky Diode

b)

Zener Diode

c)

General Purpose Diode

d)

Fast Recovery Diode

2.

IGBT full form?

a)

Insulated Gate Bipolar Transistor

b)

Isolated Gate Bipolar Transistor

c)

Intrensic Gate Bipolar Transistor

d)

Isolated Gate Bivalent Transistor

3.

IGBT is made by combining

a)

Transistor and Diode

b)

MOSFET and Diode

c)

Transistor and MOSFET

d)

MOSFET and Transistor

4.

Which are the terminals of IGBT

a)

anode, cathode and gate

b)

Emitter, Collector and Base

c)

Emitter, Collector and Gate

d)

Drain, Source and Gate

5.

Comment on the figure

a)

for a diode, trr will be less if forward current is less

b)

trr is independent on the forward current

c)

ta will be same for any value of forward current

d)

ta and tb will be same always

6.

An IGBT is also know as

a)

MOIGT (Metal oxide insulated gate transistor)

b)

COMFET (Conductively modulated FET)

c)

GEMFET (Grain modulated FET)

d)

All of the mentioned

7.

IGBT possess

a)

low input impedanc

b)

high input impedance

c)

high on-state resistance

d)

second breakdown problems

8.

The controlling parameter in IGBT is ______

a)

Gate current

b)

Gate Emitter Voltage

c)

Load current

d)

VCE

9.

In IGBT, the n– layer above the p+ layer is called as

a)

Drift layer

b)

Injection layer

c)

Body layer

d)

Collector Layer

10.

The major drawback of the first generation IGBT is

a)

latch-up problems

b)

noise & secondary breakdown problems

c)

sluggish operation

d)

latch-up & secondary breakdown problems

11.

zener diode is operated in_____region

a)

break down

b)

forward characteristics

c)

knee voltage

d)

none

12.

function of inductor is________

a)

allow ac block dc

b)

allow dc block ac

c)

allow only ac

d)

allow only dc

13.

Function of capacitor is___

a)

Allow ac block dc

b)

allow dc block ac

c)

allow only ac

d)

allow only dc

14.

Identify the component

a)

Power Transistor

b)

Resistor

c)

Power diode

d)

IGBT

15.

What is softness factor?

a)

S = (ta + tb) / tb

b)

S = tb / ta

c)

S = ta / tb

d)

S = (ta + tb) / ta

16.

An ideal power diode must have

a)

low forward current carrying capacity

b)

high ohmic junction resistance

c)

large reverse breakdown voltage

d)

high reverse recovery time

17.

Identify the Switching characteristics of power diode

a)
b)
c)
d)
18.

Find the odd one

a)
b)
c)
d)
19.

A power diode with small softness factor (S-factor) has

a)

small oscillatory over voltages

b)

large oscillatory over voltages

c)

small peak reverse current

d)

large peak reverse current

20.

which of the following condition will be satisfied by a General purpose diode?

a)

Higher trr

b)

Lower trr

c)

moderately less trr

d)

SF>1

21.

ta in reverse recovery chara is due to _____

a)

charge stored in the bulk semiconductor

b)

due to the presence of drift region

c)

being power diode

d)

charge stored in depletion region

22.

Find the odd one

a)

conductivity modulation

b)

heavily doped

c)

high temperature capability

d)

2 layer 1 junction device

23.

Power Electronics means

a)

Combination of Power, electronics and control

b)

Combination Power, instruments

c)

Combination of electronics and communication

d)

Combination metrology and control

24.

Thyristor is been developed in the year

a)

1956

b)

1972

c)

1970

d)

1975

25.

MOSFET is also called as

a)

MOST

b)

IGFET

c)

IGBT

d)

Both a & b

26.

SCR is having ____

a)

3 layers, 4 terminals

b)

3 terminals, 4 layers

c)

Both a and b

d)

None of these

27.

ETO means

a)

Emitter turn off thyristor

b)

Emitter transistor off

c)

Emitter transistor on

28.

IGBTs are ____in operation than Power MOSFET

a)

Slower

b)

Faster

c)

Equal

29.

The control element of an SCR is ………….

a)

Cathode

b)

Anode

c)

Base

d)

Gate

30.

In the SCR structure the gate terminal is located

a)

near the anode terminal

b)

near the cathode terminal

c)

in between the anode & cathode terminal

d)

no specific rule

31.

Choose the false statement.

a)

SCR is a bidirectional device

b)

SCR is a controlled device

c)

In SCR the gate is the controlling terminal

d)

SCR are used for high-power applications

32.

An SCR is turned off when …………..

a)

Anode current is reduced to zero

b)

Gate voltage is reduced to zero

c)

Gate is reverse biased

d)

Cathode current is maximum

33.

Power Diode has abrupt recovery

a)

True

b)

False

34.

Latch up is IGBT is

a)

Advantage of IGBT

b)

Disadvantage of IGBT

c)

Latch up do not exist in IGBT

d)

None of the above

35.

Latch up is IGBT is

a)

Advantage of IGBT

b)

Disadvantage of IGBT

c)

Latch up do not exist in IGBT

d)

None of the above

36.

Holding current is _______ than Latching Current

a)

Higher

b)

Lesser

c)

Equal

d)

Directly propotional

37.

What is the role of power electronics in the industry ?

a)

electric and hybrid vehicles

b)

Renewable energy systems

c)

bulk utility energy storage

d)

ALL THE ABOVE

e)

NONE OF THE ABOVE

38.

Which layer is called as drift layer?

a)

1

b)

2

c)

3

39.

What is the purpose of n- drift layer in power diode ?

a)

Its function is to absorb the depletion layer of the reverse biased p+n- junction.

b)

Wider the drift region the higher breakdown voltages.

c)

None of the above

40.

An IGBT is also know as

a)

MOIGT (Metal oxide insulated gate transistor)

b)

COMFET (Conductively modulated FET)

c)

GEMFET (Grain modulated FET)

d)

All of the mentioned

41.

Which are the terminals of IGBT

a)

anode, cathode and gate

b)

Emitter, Collector and Base

c)

Emitter, Collector and Gate

d)

Drain, Source and Gate

42.

For a forward conducting SCR device, as the forward anode to cathode voltage is increased

a)

the device turns on at higher values of gate current

b)

the device turns on at lower values of gate current

c)

the forward impedance of the device goes on increasing

d)

the forward impedance of the device goes on decreasing

43.

A thyristor can be bought from the forward conduction mode to forward blocking mode by

a)

the dv/dt triggering method

b)

applying a negative gate signal

c)

applying a positive gate signal

d)

applying a reverse voltage across anode-cathode terminals

44.

Usually the forward voltage triggering method is not used to turn-on the SCR because

a)

it increases losses

b)

it causes noise production

c)

it may damage the junction & destroy the device

d)

relatively it’s an inefficient method

45.

Among the following, the most suitable method to turn on the SCR device is the

a)

dv/dt triggering method

b)

forward voltage triggering method

c)

gate triggering method

d)

temperature triggering method

46.

The forward break over voltage is maximum when

a)

Gate current = ∞

b)

Gate current = 0

c)

Gate current = -∞

d)

It is independent of gate current

47.

For the SCR to remain in the ON (conducting) state

a)

gate signal is continuously required

b)

no continuous gate signal is required

c)

no forward anode-cathode voltage is required

d)

negative gate signal is continuously required

48.

In pulse triggering techniques ------------is used for SCR triggering

(a)  

49.

di/dt rating of SCR is specified for its

a)

Decaying anode current

b)

Decaying gate current

c)

increasing anode current

50.

for successive commutation of SCR turn off time should me

a)

Greater than

b)

less than

c)

equal

51.

The SCS (Silicon Controlled Switch) is a

a)

two terminal device

b)

three terminal device

c)

four terminal device

d)

five terminal device

52.

Which of the following devices provide complete isolation between triggering circuit and power circuit?

a)

PUT

b)

LASCR

c)

SUS

d)

DIAC

53.

The TRIAC can be represented by

a)

two SCRs in anti-parallel

b)

two SCRs in parallel

c)

two diodes in anti-parallel

d)

two diodes in parallel

54.

The SITH is a

a)

normally-off device

b)

normally-on device

c)

uncontrollable device

d)

unpredictable

55.

The RCT (Reverse Conducting Thyristor) has

a)

a diode in series with the SCR

b)

a diode in anti-parallel with the SCR

c)

two SCR’s in anti-parallel

56.

The TRIAC is most sensitive in the _________ quadrants

a)

1st & 3rd with positive gate current

b)

1st with positive gate current & 3rd with negative gate current

c)

3st with positive gate current & 1rd with negative gate current

d)

1st & 3rd with negative gate current

57.

Which of the following is highly immune to electromagnetic noise?

a)

Conventional SCR

b)

MCT

c)

SiTS

d)

LASCR

58.

Identify the VI characterstics of TRIAC

a)
b)
c)
d)

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